Smart bridge for memory core

ABSTRACT

An apparatus includes a semiconductor device that includes a three-dimensional (3D) memory. The 3D memory includes multiple memory cells arranged in multiple physical levels above a substrate. The 3D memory includes circuitry associated with operation of the multiple memory cells and includes a serializer/deserializer interface.

REFERENCE TO EARLIER-FILED APPLICATIONS

This application is a continuation of and claims priority to U.S.Non-Provisional patent application Ser. No. 13/247,635, filed Sep. 28,2011, which claims priority to U.S. Provisional Patent Application No.61/503,531, filed Jun. 30, 2011, and to Indian Application No.2124/MUM/2011, filed Jul. 26, 2011. The contents of each of theseapplications are incorporated by reference herein in their entirety.

FIELD OF THE DISCLOSURE

The present disclosure is generally related to data storage andretrieval.

BACKGROUND

The capability to store data in memory devices continually improves withadvances in technology. For example, flash memory enables non-volatilestorage of data at a semiconductor device that may include one or morememory cores. A memory die that includes one or more NAND flash memorycores conventionally includes periphery circuitry, such as one or morecharge pumps, state machines, and row decoders for each memory core, asillustrative examples. The periphery circuitry enables the memory die tobe responsive to control signals from a memory controller to store andretrieve data. However, the periphery circuitry occupies space on thememory die that may otherwise be used for flash data storage elements.

SUMMARY

A smart bridge device includes periphery circuitry for multiple memorycores that are located on separate dies than the smart bridge device.The smart bridge device may implement the periphery circuitry using CMOStechnology rather than the memory core technology. The smart bridgedevice may be responsive to a memory controller and can performconcurrent memory operations at the memory cores.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a particular illustrative embodiment of asystem that includes a data storage device having a first semiconductordevice including a memory core and a smart bridge device includingperiphery circuitry for the memory core;

FIG. 2 is a block diagram illustrating a particular embodiment of thedata storage device of FIG. 1;

FIG. 3 is a general diagram illustrating a top view and a sideelevational view of a particular embodiment of an arrangement of diesthat may be included in the data storage device of FIG. 1;

FIG. 4 is a general diagram illustrating a particular embodiment of apackage that includes the arrangement of dies of FIG. 3;

FIG. 5 is a general diagram illustrating a top view and a sideelevational view of another particular embodiment of an arrangement ofdies that may be included in the data storage device of FIG. 1;

FIG. 6 is a block diagram of a system that includes periphery diescoupled to memory core dies and coupled to controller dies;

FIG. 7 is a block diagram of two embodiments of a package that eachinclude a smart bridge device that includes multiple host interfaces andperiphery circuitry for one or more memory cores;

FIG. 8 is a general diagram illustrating embodiments of devicesfabricated using NAND flash memory core technology, using threedimensional (3D) memory core technology, and a smart bridge CMOStechnology;

FIG. 9 is a flow chart of a first embodiment of a method that may beperformed at a smart bridge device;

FIG. 10 is a flow chart of a second embodiment of a method that may beperformed at a smart bridge device;

FIG. 11 is a flow chart of a third embodiment of a method that may beperformed at a smart bridge device;

FIG. 12 is a flow chart of a fourth embodiment of a method that may beperformed at a smart bridge device; and

FIG. 13 is a flow chart of a fifth embodiment of a method that may beperformed at a smart bridge device.

DETAILED DESCRIPTION

Referring to FIG. 1, a particular embodiment of an apparatus 100 isshown. The apparatus 100 includes a data storage device 102. The datastorage device 102 includes a first semiconductor device 104 and asecond semiconductor device 108. The first semiconductor device 104includes a memory core 120 (e.g. a NAND flash memory core) that includesstorage elements, such as a representative group of storage elements122. An example of the group of storage elements 122 is a multilevelcell (MLC) word line. The data storage device 102 further includes acontroller 106, and the data storage device 102 is selectively connectedto a representative host 130.

The second semiconductor device 108 includes periphery circuitry 112.The periphery circuitry 112 is associated with the NAND flash memorycore 120 of the first semiconductor device 104. In addition, the secondsemiconductor device 108 may comprise a NAND smart bridge that mayperform NAND management device functions. For example, the secondsemiconductor device 108 including the periphery circuitry 112 mayperform management functions with respect to the memory core 120 of thefirst semiconductor device 104.

The periphery circuitry 112 may include a variety of differentcomponents, such as an error correction engine, a multi-ported staticrandom access memory (SRAM), control logic such as a finite statemachine or a micro-programmed engine, and a decoder associated with thememory core 120 (e.g. a row decoder configured to decode at least aportion of an address and to select a row of the memory core 120). Inaddition, the periphery circuitry 112 may include other elements such asa charge pump that is configured to generate voltage to be applied to atleast one of a word line, a bit line, and a source line of the memorycore 120. Further details of implementations of the periphery circuitry112 are described with respect to FIG. 2.

In a particular embodiment, the first semiconductor device 104 is afirst die and the second semiconductor device 108 is a second die. Thefirst die and the second die may be packaged together in a singlepackage. In this case, the first semiconductor device 104 and the secondsemiconductor device 108 may be disposed in a single package within thedata storage device 102.

The controller 106 may be a memory controller that includes a processor,a host interface, and an interface to the second semiconductor device108. The controller 106 may communicate user data 132 to the host 130.In addition, the controller 106 may send control information 140 to thesecond semiconductor device 108 and may send data 142 to the secondsemiconductor device 108. Thus, the controller 106 may communicate withthe host 130 and with the second semiconductor device 108.

During operation, the second semiconductor device 108 may receive thedata 142 from the controller 106, and the data 142 may be allocated tobe stored at the memory core 120 of the first semiconductor device 104.The periphery circuitry 112 within the second semiconductor device 108may be used to send a control signal 150 from the second semiconductordevice 108 to the memory core 120 at the first semiconductor device 104.The periphery circuitry 112 may send the control signal 150 to the firstsemiconductor device 104 and may send a codeword 152 to the memory core120 of the first semiconductor device 104.

The codeword 152 corresponds to and may be derived from the receiveddata 142. For example, an error correction coding (ECC) encoder withinthe periphery circuitry 112 may process the received data 142 and maygenerate the codeword 152. The periphery circuitry 112 may send thecodeword 152 to the memory core 120 for the codeword 152 to be storedtherein. The memory core 120 within the first semiconductor device 104is responsive to the control signal 150 to store the codeword 152 withinthe memory 120. For example, the control signal 150 may indicate a writeoperation to the group of storage elements 122, and the codeword 152 maybe stored within the group of storage elements 122.

During a memory read operation, the second semiconductor device 108 maysend a read control signal 150 to the memory core 120 at the firstsemiconductor device 104. In response to sending the read control signal150, the second semiconductor device 108 may receive a representation ofa codeword from the memory core 120. The representation of the codewordis received at the periphery circuitry 112 which corresponds to thememory core 120. Upon receipt of the representation of the codeword 152,circuitry within the periphery circuitry 112 (e.g. an ECC decoder) mayprocess the received representation of the codeword 152 to generate datato be communicated to the controller 106. For example, an ECC decoderwithin the periphery circuitry 112 may receive a representation of thecodeword 152 and may generate corresponding data 142 to be communicatedto the controller 106. Thus, the second semiconductor device 108 (e.g. aNAND smart bridge) may be used to perform both read and write operationswith respect to the memory core 120 of the first semiconductor device104. In addition, the second semiconductor device 108 may communicatewith the controller 106, which in turn may communicate with the externalhost 130.

The first semiconductor device 104 may be fabricated using a first typeof process technology while the second semiconductor device 108 may befabricated using a second type of process technology. For example, thefirst process technology may be NAND flash process technology while thesecond semiconductor technology may be multiple metal interconnect CMOStechnology. Using different process technologies for the first andsecond semiconductor devices 104 and 108, respectively, allows therelaxation of certain design rules with respect to the memory core 120.Relaxing the design rules for the memory core 120 enables design ofdevices increased spacing between individual cells and word lines, thusreducing intercell/interwordline interference. Thus, the firstsemiconductor device 104 may be designed to achieve greater performanceand endurance than data storage devices that include the peripherycircuitry on the same die as the memory core.

In addition, by use of the second semiconductor device 108, additionalECC encoders and decoders, or alternatively ECC encoders/decoders havinga higher error correction capability, may be disposed within theperiphery circuitry 112 of the second semiconductor device 108. Thus, amajority of the first semiconductor device 104 may be dedicated to thememory core 120 while additional circuitry to provide additionalfeatures and functionality is implemented in the second semiconductordevice 108. In addition, the periphery circuitry 112 may includeadditional memory, such as SRAM, to improve throughput and errorcorrection processing capabilities. The SRAM can be used to analyze datastored in adjacent word lines, support and manage multiple reads of awordline with different read voltages, and implementation of novel errorcorrecting algorithms.

The second fabrication process of the second semiconductor device 108may be selected to effectively manufacture devices with the particularcircuit components, such as those components within the peripherycircuitry 112, to be disposed on the second semiconductor device 108.For example, the multilevel metal interconnect CMOS process may be usedfor implementations of analog and other circuitry of the peripherycircuitry 112. In addition, implementation of the periphery circuitry112 using standard CMOS processes allows the addition of significantamounts of SRAM, and new functionality while maintaining a small devicesize.

While a single controller 106, a single second semiconductor device 108,and a single memory core 120 are shown in FIG. 1, it should beunderstood that the second semiconductor device 108 may support morethan one memory core 120 and the controller 106 may support more thanone second semiconductor device 108. In addition, while the peripherycircuitry 112 has been described with respect to an ECC encoder and anECC decoder corresponding to the memory core 120, it should beunderstood that the periphery circuitry 112 may include multiple ECCencoders and ECC decoders to support multiple memory cores (e.g. coresother than the single memory core 120 illustrated in FIG. 1). Thus, theperiphery circuitry 112 may include significant ECC processingcapabilities to support one or more than one memory core of a memorydevice, such as the first semiconductor device 104.

Referring to FIG. 2, further details of a particular embodiment of theapparatus 100 is illustrated. FIG. 2 depicts various componentspreviously shown with respect to FIG. 1 and such common components havethe same reference numbers as in FIG. 1. For example, the memory die104, the NAND flash memory core 120, the periphery circuitry 112, andthe controller 106 have the same reference numbers as indicated inFIG. 1. In addition, each of these components has the same structure andcapabilities as described with respect to FIG. 1.

FIG. 2 further depicts rows and columns of the NAND flash memory core120 of the first semiconductor device 104 (referred to as memory die 104in FIG. 2). For example, the NAND flash memory core 120 within thememory die 104 includes storage elements that are addressable by wordlines 206 and bit lines 204, and a representative cell 202 correspondingto a particular word line and bit line is shown. The memory die 104further includes a NAND smart bridge interface 208. The NAND smartbridge interface 208 is coupled to a core interface 210 of the secondsemiconductor device 108 (referred to as a NAND smart bridge device 108in FIG. 2).

The NAND smart bridge device 108 includes the periphery circuitry 112, acore interface 210, and a controller interface 214. In a particularembodiment, the controller interface 214 is a serializer/deserializer(SERDES) interface. The periphery circuitry 112 includes a processor212, a row decoder 220, a charge pump 222, a state machine 224, amulti-ported SRAM 226, an ECC engine 228, and a test engine 230 that isbe configured to test an operation of the NAND flash memory core 120.While the periphery circuitry 112 shows a variety of components, itshould be understood that the periphery circuitry 112 may include lesscomponents or additional components. For example, the peripherycircuitry 112 may include at least one of a processor, an ECC engine, arow decoder, a charge pump, and a multi-ported static random accessmemory (SRAM).

The controller 106 includes a memory interface 240, a processor 242, anECC engine 244, and a host interface 246. The host interface 246 of thecontroller 106 may be selectively coupled to a host, such as therepresentative host 130 of FIG. 1. The memory interface 240 may, in aparticular embodiment, be serial using a serializer/deserializer(SERDES) interface. The memory interface 240 communicates with thecontroller interface 214 of the NAND smart bridge 108. For example, thememory interface 240 and the controller interface 214 may eachcommunicate a stream of data symbols 216 via differential signaling, asshown in FIG. 2. Each data symbol in the stream of data signals 216 maycomprise a differential signal applied to a pair of communication linescoupled between the first serializer/deserializer (SERDES) communicationinterface (one of the memory interface 240 and the controller interface214) and the second serializer/deserializer (SERDES) communicationinterface (e.g. the other of the memory interface 240 and the controllerinterface 214). In some implementations, the core interface 210 and theNAND smart bridge interface 208 also communicate via a differentialsignaling protocol, such as a serializer/deserializer communicationinterface (not shown).

In a particular embodiment, the controller 106 is a flash memorycontroller and is used in connection with the NAND flash memory core 120of the memory die 104 and communicates via the NAND smart bridge 108 tothe NAND flash memory core 120. For example, the controller 106 maycommunicate with the NAND smart bridge 108 using theserializer/deserializer (SERDES) interface 240 as described. While boththe NAND smart bridge 108 and the controller 106 include ECC engines(e.g. ECC engine 228 and ECC engine 244), the ECC engines in therespective devices (i.e. NAND smart bridge 108 and controller 106) mayeither be a similar type of ECC engine or may be distinct types of ECCengines (e.g. a Reed-Solomon (RS) engine, a Bose-Chaudhuri-Hocquenghem(BCH) engine, a concatenated or a convolutional code engine (e.g. aturbo code engine), or any other type of ECC engine). For example, anECC engine with enhanced error correction capability may be implementedfor the ECC engine 228 within the NAND smart bridge 108 while an ECCengine with a standard level of error correction capability may beimplemented for the ECC engine 244 within the controller 106. Use ofenhanced error correction ECC processing within the ECC engine 228enables the controller 106 to manage or otherwise interface withmultiple NAND smart bridge devices, and each of the NAND smart bridgedevices may support multiple memory devices. For example, use of theenhanced error correction ECC engine 228 may enable a reduced processingburden on the ECC engine 244 within the controller 106, thereby enablingthe controller 106 to support multiple devices.

During operation, the controller 106 may receive instructions and/ordata from a host device, such as the host 130 of FIG. 1. Theinstructions and/or data may be received at the host interface 246 forinteraction with the memory die 104. The controller 106 may beconfigured to process the received instructions and/or data, such as byperforming an encoding operation at the ECC engine 244, and to send theprocessed data to the NAND smart bridge 108 via the memory interface240.

The NAND smart bridge 108 may be responsive to the stream of datasymbols 216 that are received via a differential pair of communicationlines coupled to the controller interface 214. The NAND smart bridge 108may be configured to process the received stream of data symbols 216 atthe controller interface 214 to affect operation of one or morecomponents at the periphery circuitry 112. For example, when the NANDsmart bridge 108 receives an instruction to store data to the NAND flashmemory core 120, the NAND smart bridge 108 may be configured to cache atleast a portion of received data at the multi-ported SRAM 226, to encodedata to be stored at the NAND flash memory core 120 at the ECC engine228, and to initiate a data store operation at the NAND flash memorycore 120 by sending instructions and encoded data to the memory die 104via the core interface 210.

In addition, one or more other components may operate at the NAND smartbridge 108. For example, the row decoder 220 may be used to select aparticular row 206 of the NAND flash memory core 120. As anotherexample, the charge pump 222 may be operated at the NAND smart bridge108 rather than at the memory die 104. The multi-ported SRAM 226 may beused as a cache memory, such as when the periphery circuitry 112 isconfigured to store data to the multi-ported SRAM 226 and to retrievedata from the multi-ported SRAM 226 in accordance with a cache policy,such as a least recently used (LRU) replacement policy. Operation of theperiphery circuitry 112, such as determination of specific sequences ofoperations to perform in response to a read command or a write command,may be controlled by the state machine 224, by a microprocessor 212, ora combination thereof.

The NAND flash memory core 120 may be responsive to data andinstructions from the NAND smart bridge 108 to store data, such as thecodeword 152 of FIG. 1, at a selected word line, such as the I word line(WL (i)). As another example, the NAND flash memory core 120 may beresponsive to a read command to enable one or more bit lines BLs 204 andto initiate a sensing operation to provide data from the memory cells,such as the representative cell 202, to the NAND smart bridge 108 forerror correction processing at the ECC engine 228. For example, the datato be stored at the NAND flash memory core 120 may be encoded at the ECCengine 228 using a first ECC encoding operation prior to storage. Theperiphery circuitry 112 includes the error correction (ECC) engine 228and is configured to initiate a decoding operation of a receivedrepresentation of a codeword at the ECC engine 228. The peripherycircuitry 112 may further send data generated at the ECC engine 228 tothe controller 106 that is coupled to the second semiconductor device(i.e. the NAND smart bridge 108). For example, data read from the NANDflash memory core 120 may be decoded using the ECC engine 228. Afterdecoding the data at the ECC engine 228, the data may be partiallyre-encoded at the ECC engine 228 for transfer to the controller 106. Inan alternative implementation, the decoded data resulting from a firstECC operation at the NAND smart bridge 108 may be a codeword that isdecodable by the ECC engine 244. A second decoding of the data may beperformed as a second ECC operation at the ECC engine 244. The first ECCoperation may use a different error correction code than the second ECCoperation.

The NAND smart bridge 108, located between the controller 106 and thememory die 104, enables operations that may otherwise have beenperformed at the controller 106 or at the memory die 104 to be performedat the NAND smart bridge 108. For example, the NAND smart bridge 108 mayreceive a serial stream of data symbols 216 at the controllerserializer/deserializer (SERDES) communication interface 214. Thecontroller SERDES interface 214 may deserialize the serial stream ofdata symbols 216 to generate data to be stored at the memory core 120.The NAND smart bridge 108 may send a control signal and a codeword fromthe NAND smart bridge 108 to the memory core 120. For example, thecontrol signal and the codeword may correspond to data to be stored atthe memory core 120. To illustrate, data that is received via thecontroller interface 214 may be encoded at the ECC engine 228 togenerate a codeword, as opposed to a conventional system where acodeword is generated at a memory controller. The codeword istransmitted via the core interface 210 for storage at the NAND flashmemory core 120. The serial stream of data symbols 216 may be receivedfrom the memory controller 106 via the controller interface 214.

As another example, the NAND smart bridge 108 may receive data from thememory core 120 of the memory die 104. The data may be received at theperiphery circuitry 112 that corresponds to the memory core 120. Thedata may be processed at the NAND smart bridge 108, such as by at leastpartially decoding the data at the ECC engine 228 (as opposed to aconventional system where data is decoded at a memory controller). Theprocessed data may be sent to the controller 106 that is coupled to theNAND smart bridge 108 via the controller interface 214.

For example, the received data may include a representation of acodeword and the NAND smart bridge 108 may initiate a decode operationof the representation of the codeword at the ECC engine 228. Thereceived data may have initially been stored at the memory core 120 as acodeword that includes redundant data to enable error correction anddecoding. Data may be retrieved as a representation of the codeword thatmay include one or more corrupted bits. The ECC engine 228 may initiatea decode operation in response to receiving the representation of thecodeword at an input of the ECC engine 228 and in response to receivinga control signal to perform a decode operation. The ECC engine 228 maybe configured to generate an output of decoded data, or alternatively,an indication of an error condition of the decode operation, such aswhen an error correction capability of the ECC engine 228 has beenexceeded. Data that is generated at the ECC engine 228 may be sent tothe controller 106. The controller 106 may be configured to performfurther processing of the data, such as second decoding at the ECCengine 244, and may provide data to an external host device, such as viathe host interface 246.

Further, the periphery circuitry 112 of the NAND smart bridge 108 may beconfigured to concurrently process multiple word lines of data at themulti-ported SRAM 226. For example, the processor 212 or the statemachine 224 may be configured to process the multiple word lines of datafrom the NAND flash memory core 120 to detect at least one of aninterference condition, a program disturb condition, and a read disturbcondition. To illustrate, one or more detected conditions may correspondto values stored at cells at neighboring word lines of the NAND flashmemory core 120. As another example, multiple word lines of datacorresponding to a single word line read with different sets of readvoltages may be read from the NAND flash memory core 120 into themulti-ported SRAM 226, and the periphery circuitry 112 may be configuredto perform error correction processing of the multiple word lines ofdata in the multi-ported SRAM 226. As another example, the peripherycircuitry 112 may be configured to process multiple word lines of datain the multi-ported SRAM 226 to detect specific data patterns. Asanother example, the periphery circuitry 112 may be configured toprocess multiple word lines of data in the multi-ported SRAM 226 toscramble data to be stored to the NAND flash memory core 120.

Referring to FIG. 3, a particular illustrative embodiment of anapparatus 300 having a multi-die configuration is depicted in a top viewand a side elevational view. The apparatus 300 includes a first memorydie 304 that includes a first memory core, a second memory die 306 thatincludes a second memory core, a third memory die 308 that includes athird memory core, and a fourth memory die 310 that includes a fourthmemory core. For example, the memory cores may be NAND flash memorycores. The first memory die 304 and the second memory die 306 arecoupled to a first periphery die 312 (while a NAND smart bridge (NSB)312 is shown in FIG. 3, the NSB 312 is an example of a periphery die andany other type of periphery die may be used and will be described hereinas periphery die 312). The third memory die 308 and the fourth memorydie 310 are coupled to a second periphery die 314 (e.g. a NAND smartbridge). The first periphery die 312 and the second periphery die 314are coupled to a controller die 302. The controller die 302 may becoupled to a physical interface 360 to a host device.

Components of the apparatus 300 may correspond to components of thedevice 100 illustrated in FIGS. 1-2. For example, the controller die 302may correspond to the controller 106. The first periphery die 312 maycorrespond to a first instance of the NAND smart bridge 108, and thesecond periphery die 314 may correspond to a second instance of the NANDsmart bridge 108. Each of the memory dies 304-310 may correspond to thememory die 104 and may be flash memory core dies. As illustrated, thefirst periphery die 312 is coupled to a representative first set of pads360 at the first memory die 304 via wire bonds 352. The first peripherydie 312 is also coupled to a second representative set of pads 362 atthe second memory die 306 via wire bonds 352. The second periphery die314 is coupled to a third representative set of pads 364 at the thirdmemory core 308 via wire bonds 352. The second periphery die 314 iscoupled to a fourth representative set of pads 366 at the fourth memorycore 310 via wire bonds 352. The first periphery die 312 and the secondperiphery die 314 are each coupled to the controller die 302 via wirebonds 352. Although connections between dies in FIG. 3 are illustratedas wire bonds 352, one or more other techniques may be used to enableelectrical coupling between two or more of the dies 302-314, such asflip chip bumps, through-silicon vias, one or more other electricalconnection techniques, or any combination thereof.

The first periphery die 312 is illustrated in an enlarged view asincluding a controller interface 340, periphery circuitry correspondingto a first memory core, and periphery circuitry corresponding to asecond memory core. For example, the first periphery die 312 may includea NAND smart bridge that includes control logic 342, a first ECC engine344, a second ECC engine 346, a first core interface 348, and a secondcore interface 350. The first ECC engine 344 may be part of firstperiphery circuitry (such as the periphery circuitry 112 of FIGS. 1-2),corresponding to a first memory core at the first memory die 304. Thefirst core interface 348 may be configured to enable the first peripherydie 312 to communicate control signals and data with the first memorycore of the first memory die 304. The second ECC engine 346 may be partof second periphery circuitry corresponding to the second memory core atthe second memory die 306. The second core interface 350 may beconfigured to enable the first periphery die 312 to communicate controlsignals and data with the second memory core at the second memory die306.

The first periphery die 312 may be responsive to a memory controller atthe controller die 302. For example, in response to instructionsreceived from the controller die 302, the first periphery die 312 may beconfigured to initiate a first memory operation at the first memory coreand a second memory operation at the second memory core. To illustrate,the first periphery die 312 may be configured to receive instructionsfrom the controller die 302, such as write instructions to write a firstdata word to the first memory core at the first memory die 304 and towrite a second data word to the second memory core at the second memorycore die 306. The first periphery die 312 may generate control signalsthat are operative to cause the first memory core at the first memorydie 304 and the second memory core at the second memory core die 306 toperform concurrent program operations, concurrent read operations,concurrent program and read operations, or concurrent erase operations.

The second periphery die 314 may be configured in a substantiallysimilar manner as the first periphery die 312. The second periphery die314 may be responsive to the controller die 302 to perform memoryoperations at the third memory core at the third memory die 308 and atthe fourth memory core at the fourth memory die 310.

The controller die 302 is illustrated in an enlarged view as including amemory controller having a first port 320, such as a first NAND smartbridge interface (NSB I/F), a second port 322, such as a second NANDsmart bridge interface (NSB I/F), a processor 324, an ECC engine 326,and a host interface 328.

Communication between the controller die 302 and each of the firstperiphery die 312 and the second periphery die 314 may be enabled via aserializer/deserializer communication interface. For example, thecontroller interface 340 of the first periphery die 312 may be aserializer/deserializer communication interface that is coupled to thefirst port 320 of the controller die 302. The first port 320 may also bea serializer/deserializer (Serdes) communication interface. In someembodiments, the first core interface 348 and the second core interface350 may include serializer/deserializer communication interfaces.However, in other embodiments, communication between the first peripherydie 312 and the memory cores of the first and second memory dies 304,306 may occur via a communication interface other than aserializer/deserializer communication interface.

Each of the first periphery die 312 and the second periphery die 314 areconfigured to generate control signals to control operation of one ormore memory cores. For example, the first periphery die 312 isconfigured to generate control signals to control operation of the firstmemory core at the first memory die 304 and to control operation of thesecond memory core at the second memory die 306. The first periphery die312 and the second periphery die 314 may be responsive to the controllerdie 302. For example, the first periphery die 312 may be responsive tothe memory controller at the controller die 302 to initiate a firstmemory operation at the first memory core at the first memory die 304and to initiate a second memory operation at the second memory core atthe second memory die 306. The first periphery die 312 may be configuredto perform the first memory operation substantially concurrently withperforming the second memory operation. For example, the first peripherydie 312 may be configured to receive data from the memory controller atthe controller die 302 and to initiate a first memory operation to storea first portion of the data to the first memory core at the first memorydie 304 and to concurrently initiate a second memory operation to storea second portion of the data to the second memory core at the secondmemory die 306.

As another example, the first periphery die 312 may be configured toreceive a request from the memory controller at the controller die 302to retrieve stored data. The first periphery die 312 may be responsiveto the request to retrieve the stored data by initiating a first memoryoperation that includes reading a first portion of the stored data fromthe first memory core at the first memory die 304 and by initiating asecond memory operation that includes reading a second portion of thestored data from the second memory core at the second memory die 306.The first periphery die 312 may be configured to process the firstportion of the stored data and the second portion of the stored data andto combine the processed first and second portions to be provided to thecontroller die 302.

As another example, the periphery die 312 may be configured to receive arequest from the memory controller at the controller die 302 to erasestored data. In response, the periphery die 312 may initiate a firstmemory operation that includes erasing the first portion of the storeddata from the first memory core at the first memory die 304. Theperiphery die 312 may also initiate a second memory operation thatincludes erasing the second portion of the stored data from the secondmemory core of the second memory die 306. The first and second eraseoperations may occur during a single time period.

The periphery die 312 may also be configured to concurrently performdifferent types of operations at different memory dies. As an example,the periphery die 312 may initiate a first memory operation thatincludes a write operation of first data to the first memory die 304 anda second memory operation that includes a read operation of second datafrom the second memory die 306. The periphery die 312 may be configuredto perform the write operation substantially concurrently withperforming the read operation (i.e. the write operation and the readoperation may occur during a single time period).

The control logic 342 of the first periphery die 312 may include controlcircuitry that is configured to initiate a first ECC operation at thefirst ECC engine 344 substantially concurrently with initiating a secondECC operation at the second ECC engine 346. For example, the first ECCoperation may include encoding first data at the first ECC engine 344and the second ECC operation may include encoding second data at thesecond ECC engine 346. To illustrate, the first data may be a firstportion of received data from the memory controller at the controllerdie 302, and the second data may be a second portion of the receiveddata from the memory controller at the controller die 302. The firstportion and the second portion of retrieved data may be routed by thecontrol logic 342 to the first ECC engine 344 and to the second ECCengine 346, respectively.

The control logic 342 may be configured to initiate an encode operationof the first portion of the received data at the first ECC engine 344substantially concurrently with initiating an encode operation of thesecond portion of the received data at the second ECC engine 346. Theencode ECC operations may result in first and second codewords beinggenerated. The first periphery die 312 may be configured to store thefirst codeword generated by the first ECC operation to the first memorycore at the first memory die 304 by operation of the control logic 342to control transfer of the first codeword via the first core interface348. Similarly, the first periphery die 312 may be configured to storethe second codeword generated by the second ECC operation to the secondmemory core at the second memory die 306 by operation of the controllogic 342 to control transfer of the second codeword via the second coreinterface 350.

The first periphery die 312 may be configured to decode first data atthe first ECC engine 344 and, substantially concurrently with decodingthe first data, to decode second data at the second ECC engine 346. Forexample, the first periphery die 312 may be configured to retrieve firstdata, such as a representation of a first codeword, via the first coreinterface 348. The first periphery die 312 may be configured to receivesecond data, such as representation of the second codeword, from thesecond memory die 306 via the second core interface 350. Upon receivingthe first and second data, the control logic 342 may be configured todirect the first data to an input of the first ECC engine 344 and todirect the second data to an input of the second ECC engine 346, forsubstantially concurrent decoding of the first data and the second data.Outputs of decode operations at the first ECC engine 344 and at thesecond ECC engine 346 may result in decoded data being routed by thecontrol logic 342 to the controller die 302 via the controller interface340.

As illustrated in the side elevational view of the apparatus 300, thecontroller die 302 is stacked on the first memory die 304. The firstmemory die 304 is stacked on the second memory die 306. The secondmemory die 306 is stacked on the third memory die 308, and the thirdmemory die 308 is stacked on the fourth memory die 310. The secondperiphery die 314 is coupled to the controller die 302, the third memorydie 308, and the fourth memory die 310 via the wire bonds 352. Each ofthe memory dies 304-310 are illustrated as being offset from each otherto enable the representative sets of pads 360, 362, 364, 366 to beaccessible for wire bonding to the respective periphery dies 312, 314.

As illustrated in the top view of the apparatus 300, the controller die302, the first periphery die 312, and the second periphery die 314 areeach smaller than each memory die 304, 306, 308, and 310. Although eachof the periphery dies 312, 314 is illustrated as being coupled to twomemory dies, in other embodiments each periphery die 312, 314 mayinstead be coupled to a single memory die or to more than two memorydies. For example, the first periphery die 312 may further include athird ECC engine and a third core interface to enable substantiallyconcurrent memory accesses and operations at three memory dies. Althoughthe memory dies 304, 306, 308, and 310 are each described as having aflash memory core, in other embodiments one or more of the memory dies304, 306, 308, and 310 may include multiple flash memory cores or mayinclude one or more cores of another memory type, such as cores of athree-dimensional (3D) memory. Illustrative examples of flash memory and3D memory are described in FIG. 8.

FIG. 4 depicts the apparatus 300 of FIG. 3 in a representative packageconfiguration (e.g. a system-in-package (SiP) configuration). Thecontroller die 302, the first memory die 304, the second memory die 306,the third memory die 308, and the fourth memory die 310 are illustratedin a stacked arrangement on a substrate, such as a printed circuit board362. The periphery die 314 is also coupled to the printed circuit board362. In addition, the controller die 302, the first memory die 304, thesecond memory die 306, the third memory die 308, and the fourth memorydie 310 are each illustrated as being electrically coupled to theprinted circuit board 362 via wire bonds (or via direct electricalcoupling (e.g. surface mounting) in the case of the fourth memory die310). The printed circuit board 362 is coupled to the physical interface360. For example, the physical interface 360 may include a universalserial bus (USB) physical interface, a secure digital (SD) interface,one or more other physical interfaces to enable communication with ahost device, such as with the representative host device 130 FIG. 1, orany combination thereof.

The package 400 is a common package (i.e. the single package 400includes each of the dies 302-314) that further includes the printedcircuit board 362 and the physical interface 360. In other embodiments,the dies 302-314 may be included in a single package according to otherconfigurations. For example, in other implementations, the package 400may not include the printed circuit board 362. As another example, thephysical interface 360 may be implemented as electrical contacts such aspads or conductive bumps on one or more of the dies 302-314 that areaccessible at an exterior of the package 400.

FIG. 5 depicts an apparatus 500 that includes components of theapparatus 300 at FIG. 3 in a different physical configuration. Theapparatus 500 includes the controller die 302, the first periphery die312, the second periphery die 314, the first memory die 304, the secondmemory die 306, the third memory die 308, and the fourth memory die 310in a stacked arrangement that is illustrated in a top view and a sideelevational view. The first periphery die 312 and the second peripherydie 314 are illustrated as stacked on top of the first memory die 304.The first periphery die 312 and the second periphery die 314 may beprovided with a faster and/or more reliable communication with thecontroller die 302 as compared to the configuration of FIG. 3 as aresult of shortened lengths of wire bonds between the controller die 302and the periphery dies 312, 314. The controller die 302 may be coupledto a physical interface 360 to a host device. The apparatus 500 of FIG.5 may be incorporated into a single package, such as the illustrativepackage 400 of FIG. 4.

Referring to FIG. 6, a particular embodiment of a system 600 includingmemory cores and periphery circuitry of the memory cores on separatedies (e.g. NAND smart bridge devices) is shown. The system 600 includesa router device 620 coupled to a network of memory subsystems 602, 604,606, and 608. Each of the memory subsystems 602-608, such as therepresentative memory subsystem 604, includes a controller die 610, afirst NAND smart bridge device 612, a second NAND smart bridge device614, a first memory core die 616, and a second memory core die 618. Therouter device 620 may be configured to route messages, such as controlsignals and/or data, to one or more controller dies, such as therepresentative controller die 610, for distributed processing amongmultiple controller dies of the system 600 and for additionaldistributed processing among the multiple NAND smart bridge devices ofthe system 600.

For example, the controller die 610 may be configured to receive controlinformation and/or data from the router device 620 and to determinewhether or not the controller die 610 is an intended recipient of thecontrol information and/or data. The controller die 610 may beconfigured to pass along the received control information and/or data toone or more other controller dies or other memory subsystems. When thecontroller die 610 is determined to be an intended recipient of thecontrol information and/or data, the controller die 610 may beconfigured to send control instructions to one or both of the NAND smartbridge devices 612, 614 to initiate memory operations at one or both ofthe memory core dies 616 and 618.

To illustrate, the controller die 610 may be configured to initiate astorage operation of a received data word by sending a first portion ofthe data word to the first NAND smart bridge device 612 and a secondportion of the data word to the second NAND smart bridge device 614,such as described with respect to FIG. 3. The NAND smart bridge devices612, 614 may be configured to concurrently initiate ECC encodingoperations of the first portion of the data word and the second portionof the data word. The NAND smart bridge device 612 may be configured tostore an encoded result of a first ECC encode operation to the firstmemory core die 616 concurrently with the second NAND smart bridgedevice 614 storing an encoded result of a second ECC operation to thesecond memory core die 618.

The controller die 610 may be configured to identify itself as anintended recipient of a memory read operation and to recover a data wordthat was previously stored to the memory cores dies 616, 618. Thecontroller die 610 may be configured to send read instructions to theNAND smart bridge devices 612, 614 to read data corresponding to a firstportion of a requested data word and a second portion of the requesteddata word from the first memory core die 616 and the second memory coredie 618, respectively. The controller die 610 may be configured toreceive decoded retrieved information from the first NAND smart bridgedevice 612 and the second NAND smart bridge device 614, to combine thereceived portions, to perform a second ECC decode operation, such asdescribed with respect to FIG. 3, and to return a result to a requestorvia the router device 620. Each of the memory subsystems 602, 606, and608 may operate as described for the representative subsystem 604.

By enabling multiple parallel memory access operations using adistributed architecture including the controller die 610 and the NANDsmart bridge devices 612, 614, the system 600 enables a high datathroughput as observed by the router 620. The system 600 may also enabledesign flexibility by addition or removal of one or more of the memorysubsystems 602-608.

Referring to FIG. 7, a packaged device 700 including a smart bridgedevice 712 is illustrated in a first configuration 702 to use a firstmemory controller interface 718 and a second configuration 704 to use asecond memory controller interface 720. The packaged device 700 includesone or more memory core dies 710 coupled to the smart bridge device 712.The smart bridge device 712 includes a core interface 714, peripheralcircuitry 716, the first memory controller interface 718, and the secondmemory controller interface 720. As an example, each of the one or morememory dies 710 may correspond to the memory die 104 of FIG. 2, the coreinterface 714 may correspond to the core interface 210 of FIG. 2, andthe periphery circuitry 716 may correspond to the periphery circuitry112 illustrated in FIG. 2.

The one or more memory dies 710 and the smart bridge device 712 arehoused in a package that has a controller physical interface 722,illustrated as a set of conductive contacts or pins. In the firstconfiguration 702, the first memory controller interface 718 is coupledto the controller physical interface 722 via conductive lines 724, suchas wire bonds. The first memory controller interface 718 may be aconventional or “legacy” controller interface that enables an externalmemory controller to communicate with the packaged device 700 as if thepackaged device 700 were a conventional NAND flash memory die. In thesecond configuration 704, the second memory controller interface 720 isa serializer/deserializer interface that is coupled to the controllerphysical interface 722 via conductive lines 726. The secondconfiguration 704 enables the packaged device 700 to communicate with amemory controller via a high-speed serial interface.

The first implementation 702 or the second implementation 704 may beselected to enable communication with a particular memory controllerdevice. Although FIG. 7 illustrates that only one of the memorycontroller interfaces 718, 720 is coupled to the physical interface 722via conductive lines 724 or 726, in other embodiments the packageddevice 700 may include a switching mechanism that can be configured toenable either of the memory controller interfaces 718, 720 to beoperatively coupled to the physical interface 722 based on a capabilityof a memory controller that is to be coupled to the packaged device 700.

Referring to FIG. 8, a particular illustrative embodiment of a firstlayout for a NAND flash memory core 802 is depicted. A second layout fora 3D memory core 804 and a third layout for a smart bridge device 806including a multi-metallization layer interconnect for complementarymetal-oxide-semiconductor (CMOS) are also depicted. The NAND flashmemory core 802, the 3D memory core 804, and the smart bridge device 806are depicted in a simplified format for ease of explanation and are notnecessarily drawn to scale.

The NAND flash memory core 802 includes a substrate 810 and structuresincluding a first source gate (SG) 812, a second source gate 814, afirst NAND flash memory cell 816, and a second NAND flash memory cell818. The NAND flash memory core 802 has a first metallization layer (M0)820, a second metallization layer (M1) 822, and a third metallizationlayer (M2) 824. The structures 812-818 and the metallization layers820-824 are separated by dielectric material(s).

The NAND flash memory cells 816 and 818 are representative cells of aNAND flash string that is selectively isolated from or coupled to asource line via the second source gate 814. Although only two cells 816,818 are illustrated, the NAND flash string may have any number of cells,such as 64 cells. Each of the cells 816 and 818 includes a conductivefloating gate (e.g. a polysilicon gate) 834 that is isolated from thesubstrate 810 via a tunnel insulator (e.g. a tunnel oxide) 830. Aninsulator layer 836 is disposed above the floating gate 834, and acontrol gate (e.g. a polysilicon gate) 838 is disposed above theinsulator layer 836. A conductive word line (WL) 840 (e.g. a metal line)is positioned on the control gate 838. The source gates 812, 814 have asimilar structure as the cells 816, 818. Highly doped regions of thesubstrate 810, such as a representative doped region 832, are positionedbetween the structures of the NAND flash string. For example, the dopedregion 832 may be a portion of the substrate 810 having a highconcentration of electron donors (i.e. an n+ region).

The first metallization layer M0 820 includes a source line that iscoupled to a source at a first end of the illustrated NAND flash stringvia a representative interconnection or a via that provides anelectrical connection between the M0 layer 820 and a source region ofthe substrate 810. The second metallization layer M1 822 includes a bitline that is coupled to a second end of the NAND flash string via adrain gate (not shown). The third metallization layer M2 824 includescell source lines (CELSRC) and p-well lines (CPWELL).

The NAND flash memory core 802 may be designed to satisfy criteria suchas a height limit of a package that includes the NAND flash memory core802. For example, a memory density may be increased by stacking multiplememory core dies in a package. Because a thickness of each memory coredie increases with each additional metallization layer 820-824 that isincluded in the memory core, a higher memory density may be obtained ina package of multiple NAND flash memory cores by using as fewmetallization layers as possible in each NAND flash memory core. A costto manufacture the NAND flash memory core may increase with eachadditional metallization layer that is used. Using fewer metallizationlayers may therefore reduce a manufacturing cost associated with theNAND flash memory core.

The 3D memory core 804 includes a substrate 842, an insulating layer 844on the substrate 842, and memory cells 846, 847, and 848 stacked abovethe substrate 842 in a representative vertical column of 3D memory. Thefirst memory cell 846 is located between a first metal layer 850 and asecond metal layer 852, the second memory cell 847 is located betweenthe second metal layer 852 and a third metal layer 854, and the thirdmemory cell 848 is located between the third metal layer 854 and afourth metal layer 856. Each cell 846-848 has a diode-type structurethat includes a first layer 858 with a high concentration of electrondonors (n+ layer), a second layer 860 with a lower concentration ofelectron donors (n− layer), a third layer 862 with a high concentrationof hole donors (p+ layer), and a control layer 864 that is configurableto function as an isolation layer or a conductive layer. For example, afirst data value may be stored in the third memory cell 848 by thecontrol layer 864 being configured to have an electrically conductivecharacteristic that allows current to flow between the third metal layer854 and the fourth metal layer 856. A second data value may be stored inthe third memory cell 848 by the control layer 864 being configured tohave an electrically insulating characteristic to prevent orsignificantly reduce current flow between the third metal layer 854 andthe fourth metal layer 856.

The 3D memory core 804 may be designed with an increased storagecapacity by increasing a number of memory cells in each vertical column.However, increasing the number of cells in each column increases theheight of the column, resulting in stacks of metal and semiconductorthat may have increased height (i.e. a larger distance from thesubstrate 842) as compared to logic that uses relatively shallowstructures (i.e. at a smaller distance from the substrate 842).Combining 3D memory cells and logic on a single die can present designchallenges due to the disparity in height between the memory cellstructures and the shallow logic structures (e.g. transistors).

The smart bridge device 806 includes multiple metallization layers882-888 separated by dielectric layers 875-881 over a substrate 870. Alogic structure is illustrated as a transistor having a source 874formed of a doped region of the substrate 870. A via 872 is illustratedthat provides a conductive path between the source 874 and the thirdmetallization layer (M3) 884. The transistor also includes a drain thatis coupled to the second metallization layer (M2) 883 and a gate that iscoupled to the first metallization layer (M1) 882.

The multiple metallization layers 882-888 enable an increased density oflogic structures (e.g. transistors) to be formed on the substrate 870 ascompared to the NAND flash memory core 802 because each additionalmetallization layer increases a number of available lines to routesignals between logic structures. For example, design criteria regardingmetal line thickness and spacing between adjacent lines may constrainplacement of vias and may also limit a number of available signalingpaths for logic structures formed on the NAND flash memory core 802.Because only three metallization layers 820-822 are available on theNAND flash memory core 802, placement of interconnects for signalrouting may be more distributed (i.e. fewer interconnects and fewersignals can be provided per unit area) than on the smart bridge device806. As a result, dimensions of logic structures on the NAND flashmemory core 802 may be larger than on the smart bridge device 806.

Various benefits may be attained by implementing periphery circuitrythat is conventionally located at a NAND flash memory core at the smartbridge device 806. For example, because smaller devices typically useless power than larger devices, power consumption may be reduced. Asanother example, because larger devices spread out over a larger arearequire larger drivers for high-speed operation, improvement inoperating speed, reduction in driver size and driver power consumption,or both, may be attained.

As another example, structures that require a large number of signalpaths (e.g. dual-ported SRAM) that may be difficult to implement in theNAND flash memory core 802 may be relatively simple to implement usingthe multiple metallization layers of the smart bridge device 806.

Dual-ported SRAM can be used as a cache to improve a throughput ofmemory operations. For example, dual-ported SRAM can enable the smartbridge device 806 to hold data that is received from a memory controllerduring a write operation until the NAND flash memory core 802 is readyto store the received data. As other examples, SRAM can be used at thesmart bridge device 806 for processing and analysis of data, such asreading multiple word lines for analysis (e.g. for interference, programdisturb, and/or read disturb), multiple read results of a word line withdifferent read voltages to enable error correction, analysis of data tobe stored (for specific data patterns), and to enable scrambling of datathat is to be stored, as illustrative, non-limiting examples.

As another example, implementing periphery circuitry that isconventionally located at a NAND flash memory core at the smart bridgedevice 806 frees space on the NAND flash memory core 802 and enables anincrease of storage capacity by adding additional memory elements.Implementing periphery circuitry at the smart bridge device 806 enablesa size of the NAND flash memory core 802 to be reduced as compared toconventional flash memory cores with substantially similar storagecapacity. Implementing periphery circuitry at the smart bridge device806 also enables a pitch (e.g. cell-to-cell spacing) of the NAND flashmemory core 802 to be increased as compared to conventional NAND flashmemory cores. By increasing a cell-to-cell spacing within the NAND flashmemory core 802 as compared to conventional NAND flash memory cores,cross-coupling effects, program disturb effects, read disturb effects,and/or other effects that may cause data errors may be reduced in theNAND flash memory core 802 as compared to conventional NAND flash memorycores. As a result of fewer errors occurring in the NAND flash memorycore 802 as compared to conventional NAND flash memory cores, a simplerECC engine may be used (with reduced size, cost, and/or powerconsumption), an increased device lifetime may be attained, or both.

Another example of periphery circuitry that can be implemented at thesmart bridge device 806 is a charge pump of the NAND flash memory core802. Due to the relatively large size of charge pumps, a conventionalNAND flash memory core has relatively few charge pumps and usesrelatively long NAND strings (e.g. 64 cells/string) between a bit lineand a source line. A greater number of charge pumps providing a greateramount charge may be integrated in the smart bridge device 806 than areavailable in a conventional NAND flash memory core. As a result, shorterNAND strings (e.g. 32 cells/string) may be used, and read times andprogram times may be improved as compared to conventional NAND flashmemory cores that use fewer charge pumps coupled to longer NAND strings.

Although various benefits are described with respect to the NAND flashmemory core 802, similar benefits may be attained in a 3D memory deviceby moving periphery circuitry of the 3D memory core 804 to the smartbridge device 806. Similar benefits may be attained in the system 100 ofFIGS. 1-2, the apparatus 300 of FIG. 3, the package 400 of FIG. 4, theapparatus 500 of FIG. 5, the system 600 of FIG. 6, the packaged device700 of FIG. 7, or any combination thereof.

FIG. 9 is a flowchart of a particular embodiment of a method ofoperating a device, such as the second semiconductor device 108 of FIGS.1-2, the periphery die 312 or 314 of FIGS. 3-5, the NAND smart bridgedevice 612 or 614 of FIG. 6, or the smart bridge 712 of FIG. 7, asillustrative, non-limiting examples. Data is received at a secondsemiconductor device for storage at a NAND flash memory core at a firstsemiconductor device, at 902. For example, the first semiconductordevice may be the first semiconductor device 104 of FIG. 1 and thesecond semiconductor device may be the second semiconductor device 108of FIG. 1. As another example, the first semiconductor device may be thefirst memory die 304 or the second memory die 306 of FIGS. 3-5 and thesecond semiconductor device may be the first periphery die 312 of FIGS.3-5. As another example, the first semiconductor device may be the thirdmemory die 308 or the fourth memory die 310 of FIGS. 3-5 and the secondsemiconductor device may be the second periphery die 314 of FIGS. 3-5.As another example, the first semiconductor device may be the firstmemory core die 616 of FIG. 6 and the second semiconductor device may bethe first NAND smart bridge device 612 of FIG. 6. As another example,the first semiconductor device may be the second memory core die 618 ofFIG. 6 and the second semiconductor device may be the second NAND smartbridge device 614 of FIG. 6. As another example, the first semiconductordevice may be the memory core die 710 of FIG. 7 and the secondsemiconductor device may be the smart bridge device 712 of FIG. 7. Thedata may be received from a memory controller coupled to the secondsemiconductor device, such as the controller 106 of FIG. 1.

The second semiconductor device includes periphery circuitry for theNAND flash memory core. For example, the periphery circuitry may includeat least one of a processor, an error correction coding (ECC) engine, arow decoder, a charge pump, and a multi-ported static random accessmemory (SRAM). To illustrate, the periphery circuitry may correspond tothe periphery circuitry 112 illustrated in FIG. 1 or in FIG. 2, mayinclude the first ECC engine 344 or the second ECC engine 346 of FIG. 3,or may correspond to the periphery circuitry 716 of FIG. 7, asillustrative, non-limiting examples.

A control signal is sent from the second semiconductor device to theNAND flash memory core at the first semiconductor device, at 904. Forexample, the control signal may be the control signal 150 of FIG. 1. Thecontrol signal may instruct the NAND flash memory core to initiate adata storage operation.

A codeword may be sent from the second semiconductor device to the NANDflash memory core, at 906. The codeword can correspond to the receiveddata. For example, the codeword can be an output of an ECC operationthat is performed at the second semiconductor device. The NAND flashmemory core may be responsive to the control signal to store thecodeword.

FIG. 10 is a flowchart of a particular embodiment of a method ofoperating a device, such as the second semiconductor device 108 of FIGS.1-2, the periphery die 312 or 314 of FIGS. 3-5, the NAND smart bridgedevice 612 or 614 of FIG. 6, or the smart bridge 712 of FIG. 7, asillustrative, non-limiting examples. A control signal is sent from asecond semiconductor device to a NAND flash memory core at a firstsemiconductor device, at 1002. For example, the control signal may bethe control signal 150 of FIG. 1. As another example, the firstsemiconductor device may be the first memory die 304 or the secondmemory die 306 of FIGS. 3-5 and the second semiconductor device may bethe first periphery die 312 of FIGS. 3-5. As another example, the firstsemiconductor device may be the third memory die 308 or the fourthmemory die 310 of FIGS. 3-5 and the second semiconductor device may bethe second periphery die 314 of FIGS. 3-5. As another example, the firstsemiconductor device may be the first memory core die 616 of FIG. 6 andthe second semiconductor device may be the first NAND smart bridgedevice 612 of FIG. 6. As another example, the first semiconductor devicemay be the second memory core die 618 of FIG. 6 and the secondsemiconductor device may be the second NAND smart bridge device 614 ofFIG. 6. As another example, the first semiconductor device may be thememory core die 710 of FIG. 7 and the second semiconductor device may bethe smart bridge device 712 of FIG. 7.

The method also includes receiving, at the second semiconductor device,a representation of a codeword from the NAND flash memory core, at 1004.For example, the representation of the codeword may be retrieved fromthe memory core 120 of FIG. 1 and may include one or more bit errors.

The representation of the codeword is received at periphery circuitryfor the NAND flash memory core. The periphery circuitry may include atleast one of a processor, an error correction coding (ECC) engine, a rowdecoder, a charge pump, and a multi-ported static random access memory(SRAM). For example, the periphery circuitry may be the peripherycircuitry 112 illustrated in FIG. 1 or in FIG. 2, may include the firstECC engine 344 or the second ECC engine 346 of FIG. 3, or may correspondto the periphery circuitry 716 of FIG. 7, as illustrative, non-limitingexamples.

Data generated at the ECC engine may be sent to a memory controllercoupled to the second semiconductor device, at 1006. For example, theperiphery circuitry may include the error correction coding (ECC) engine228 of FIG. 2. A decode operation of the representation of the codewordmay be initiated at the ECC engine 228 to recover decoded data and thedecoded data may be sent to the controller 106 of FIG. 2. As anotherexample, the memory controller may be the controller 106 of FIG. 1 ormay be implemented at the controller die 302 of FIGS. 3-5 or at thecontroller die 610 of FIG. 6 as illustrative, non-limiting examples.

FIG. 11 is a flowchart of a particular embodiment of a method ofoperating a device, such as the second semiconductor device 108 of FIGS.1-2, the periphery die 312 or 314 of FIGS. 3-5, the NAND smart bridgedevice 612 or 614 of FIG. 6, or the smart bridge 712 of FIG. 7, asillustrative, non-limiting examples. A serial stream of data symbols arereceived at a serializer/deserializer communication interface of asecond semiconductor device, at 1102. The second semiconductor deviceincludes periphery circuitry for a memory core at a first semiconductordevice. The periphery circuitry may include at least one of a processor,an error correction coding (ECC) engine, a row decoder, a charge pump,and a multi-ported static random access memory (SRAM). For example, thesecond semiconductor device may be the second semiconductor device 108illustrated in FIG. 2. As another example, the first semiconductordevice may be the first memory die 304 or the second memory die 306 ofFIGS. 3-5 and the second semiconductor device may be the first peripherydie 312 of FIGS. 3-5. As another example, the first semiconductor devicemay be the third memory die 308 or the fourth memory die 310 of FIGS.3-5 and the second semiconductor device may be the second periphery die314 of FIGS. 3-5. As another example, the first semiconductor device maybe the first memory core die 616 of FIG. 6 and the second semiconductordevice may be the first NAND smart bridge device 612 of FIG. 6. Asanother example, the first semiconductor device may be the second memorycore die 618 of FIG. 6 and the second semiconductor device may be thesecond NAND smart bridge device 614 of FIG. 6. As another example, thefirst semiconductor device may be the memory core die 710 of FIG. 7 andthe second semiconductor device may be the smart bridge device 712 ofFIG. 7.

The serial steam of data symbols is deserialized to generate data to bestored at the memory core, at 1104. The serial stream of data symbolsmay be received from a memory controller coupled to the secondsemiconductor device via a second serializer/deserializer communicationinterface. For example, the serial stream of data symbols may be thestream of data symbols 216 of FIG. 2.

A control signal is sent from the second semiconductor device to thememory core, at 1106. For example, the control signal be the controlsignal 150 of FIG. 1. The memory core may be responsive to the controlsignal to initiate a data store operation.

A codeword may be sent from the second semiconductor device to thememory core, at 1108. The codeword may correspond to the data to bestored at the memory core. For example, the codeword may be generated atan ECC engine within the periphery circuitry. The memory core may beresponsive to the control signal to store the codeword.

FIG. 12 is a flowchart of a particular embodiment of a method that maybe performed at the second semiconductor device 108 of FIGS. 1-2, theperiphery die 312 or 314 of FIGS. 3-5, the NAND smart bridge device 612or 614 of FIG. 6, or the smart bridge 712 of FIG. 7, as illustrative,non-limiting examples. The method includes receiving, at a secondsemiconductor device, data read from a memory core at a firstsemiconductor device, at 1202. The data is received at peripherycircuitry for the memory core. The periphery circuitry is at the secondsemiconductor device, such as the periphery circuitry 112 of FIGS. 1-2,and may include at least one of a processor, an error correction coding(ECC) engine, a row decoder, a charge pump, and a multi-ported staticrandom access memory (SRAM). For example, the first semiconductor devicemay be the first semiconductor device 104 of FIGS. 1-2 and the secondsemiconductor device may be the second semiconductor device 108 of FIGS.1-2. As another example, the first semiconductor device may be the firstmemory die 304 or the second memory die 306 of FIGS. 3-5 and the secondsemiconductor device may be the first periphery die 312 of FIGS. 3-5. Asanother example, the first semiconductor device may be the third memorydie 308 or the fourth memory die 310 of FIGS. 3-5 and the secondsemiconductor device may be the second periphery die 314 of FIGS. 3-5.As another example, the first semiconductor device may be the firstmemory core die 616 of FIG. 6 and the second semiconductor device may bethe first NAND smart bridge device 612 of FIG. 6. As another example,the first semiconductor device may be the second memory core die 618 ofFIG. 6 and the second semiconductor device may be the second NAND smartbridge device 614 of FIG. 6. As another example, the first semiconductordevice may be the memory core die 710 of FIG. 7 and the secondsemiconductor device may be the smart bridge device 712 of FIG. 7.

The data is processed at the second semiconductor device, at 1204. Forexample, the received data includes a representation of a codeword (e.g.the received data may include a codeword that has one or more biterrors. The periphery circuitry may include an error correction coding(ECC) engine, such as the ECC engine 228 of FIG. 2, the first ECC engine344 of FIG. 3, or the second ECC engine 346 of FIG. 3, as illustrative,non-limiting examples. Processing the data at the second semiconductordevice may include initiating a decode operation of the representationof the codeword at the ECC engine.

The processed data is sent to a memory controller coupled to the secondsemiconductor device via a serializer/deserializer communicationinterface, at 1206. For example, the processed data may be sent as thestream of data symbols 216 from the controller interface 214 to thememory interface 240 of FIG. 2. As another example, the memorycontroller may be the controller 106 of FIG. 1 or may be implemented atthe controller die 302 of FIGS. 3-5 or at the controller die 610 of FIG.6 as illustrative, non-limiting examples.

FIG. 13 is a flowchart of a particular embodiment of a method that maybe performed at the second semiconductor device 108 of FIGS. 1-2, theperiphery die 312 or 314 of FIGS. 3-5, the NAND smart bridge device 612or 614 of FIG. 6, or the smart bridge 712 of FIG. 7, as illustrative,non-limiting examples. A request is received at a periphery die, at1302. The request is received from a memory controller coupled to theperiphery die. For example, the memory controller may be the controller106 and the periphery die may be the second semiconductor device 108 ofFIGS. 1-2. As another example, the controller may be implemented in thecontroller die 302 of FIGS. 3-5 and the periphery die may be the firstperiphery die 312 or the second periphery die 314 of FIGS. 3-5. Asanother example, the memory controller may be implemented at thecontroller die 610 of FIG. 6 and the periphery die may be the first NANDsmart bridge device 612 or the second NAND smart bridge device 614 ofFIG. 6. As another example, the periphery die may be the smart bridgedevice 712 of FIG. 7.

The periphery die includes periphery circuitry corresponding to a firstmemory core and periphery circuitry corresponding to a second memorycore. For example, the periphery die may be the first periphery die 312of FIG. 3 that includes periphery circuitry for the first memory core atthe first memory core die 304 and periphery circuitry for the secondmemory core at the second memory core die 306.

The method includes, in response to the request, initiating a firstmemory operation at a first memory die including a first memory core, at1304, and initiating a second memory operation at a second memory dieincluding a second memory core, at 1306. The periphery die may beconfigured to perform the first memory operation substantiallyconcurrently with performing the second memory operation. The firstmemory core and the second memory core may be implemented in the firstsemiconductor device 104 of FIGS. 1-2, in one or more of the memory coredies 304-310 of FIGS. 3-5, in one or more of the memory core dies 616,618 of FIG. 6, or in the one or more memory core dies 710 of FIG. 7, asillustrative, non-limiting examples.

As an example, if the request is a request to store data, the firstmemory operation may include storing a first portion of the data to thefirst memory core and the second memory operation may include storing asecond portion of the data to the second memory core. As anotherexample, if the request is a request to retrieve stored data, the firstmemory operation may include reading a first portion of the stored datafrom the first memory core and the second memory operation may includesreading a second portion of the stored data from the second memory core.As a third example, if the request is a request to erase stored data,the first memory operation may include erasing data at the first memorycore and the second memory operation may include erasing data at thesecond memory core.

As another example, the first memory operation and the second memoryoperation may be different types of memory operations. To illustrate,the first memory operation may include a write operation of first dataand the second memory operation may include a read operation of seconddata. The write operation may be performed substantially concurrentlywith performing the read operation.

The periphery die may include a first error correction coding (ECC)engine and a second ECC engine, such as the first ECC engine 344 and thesecond ECC engine 346 of FIG. 3. A first ECC operation may be performedat the first ECC engine substantially concurrently with a second ECCoperation being performed at the second ECC engine. For example, thefirst ECC operation may include encoding first data at the first ECCengine and the second ECC operation may include encoding second data atthe second ECC engine. The first data may be a first portion of receiveddata from the memory controller and the second data may be a secondportion of the received data from the memory controller. The firstmemory operation may include storing a first codeword generated by thefirst ECC operation to the first memory core. The second memoryoperation may include storing a second codeword generated by the secondECC operation to the second memory core.

As another example, the first ECC operation may include decoding firstdata at the first ECC engine and the second ECC operation may includedecoding second data at the second ECC engine. The first data maycorrespond to a first portion of data requested by the memory controllerand the second data may correspond to a second portion of the datarequested by the memory controller. The first memory operation mayinclude retrieving a first representation of a first codeword from thefirst memory core to be decoded by the first ECC operation. The secondmemory operation may include retrieving a second representation of asecond codeword from the second memory core to be decoded by the secondECC operation.

Although various components depicted herein are illustrated as blockcomponents and described in general terms, such components may includeone or more microprocessors, state machines, or other circuitsconfigured to enable the smart bridge device 108 to perform theparticular functions attributed to such components. For example, theperiphery circuitry 112 may represent physical components, such ashardware controllers, state machines, logic circuits, or otherstructures, to enable the smart bridge device 108 to conduct memoryoperations at the memory core 120 of FIG. 1.

The smart bridge device 108 may include dedicated hardware (i.e.circuitry) to implement communication with one or more memorycontrollers and to initiate operations at one or more memory cores.Alternatively, or in addition, the smart bridge device 108 may implementcommunication with one or more memory controllers and initiateoperations at one or more memory cores using a microprocessor ormicrocontroller. In a particular embodiment, the smart bridge device 108includes instructions that are executed by the processor 212 of FIG. 2and the instructions are stored at the memory core 120. Alternatively,or in addition, instructions that are executed by a processor that maybe included in the smart bridge device 108 may be stored at a separatememory location that is not part of the memory core 120, such as at aread-only memory (ROM).

In a particular embodiment, the smart bridge device 108 may beimplemented in a portable device configured to be selectively coupled toone or more external devices. However, in other embodiments, the smartbridge device 108 may be attached or embedded within one or more hostdevices, such as within a housing of a host portable communicationdevice. For example, the smart bridge device 108 may be within apackaged apparatus such as a wireless telephone, personal digitalassistant (PDA), gaming device or console, portable navigation device,or other device that uses internal non-volatile memory. In a particularembodiment, the smart bridge device 108 may be coupled to a non-volatilememory, such as a three-dimensional (3D) memory, flash memory (e.g.,NAND, NOR, Multi-Level Cell (MLC), Divided bit-line NOR (DINOR), AND,high capacitive coupling ratio (HiCR), asymmetrical contactlesstransistor (ACT), or other flash memories), an erasable programmableread-only memory (EPROM), an electrically-erasable programmableread-only memory (EEPROM), a read-only memory (ROM), a one-timeprogrammable memory (OTP), or any other type of memory.

The illustrations of the embodiments described herein are intended toprovide a general understanding of the various embodiments. Otherembodiments may be utilized and derived from the disclosure, such thatstructural and logical substitutions and changes may be made withoutdeparting from the scope of the disclosure. This disclosure is intendedto cover any and all subsequent adaptations or variations of variousembodiments. Accordingly, the disclosure and the figures are to beregarded as illustrative rather than restrictive.

The above-disclosed subject matter is to be considered illustrative, andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other embodiments, which fall withinthe scope of the present disclosure. Thus, to the maximum extent allowedby law, the scope of the present invention is to be determined by thebroadest permissible interpretation of the following claims and theirequivalents, and shall not be restricted or limited by the foregoingdetailed description.

What is claimed is:
 1. An apparatus comprising: a semiconductor dieincluding a three-dimensional (3D) memory that includes multiple memorycells arranged in multiple physical levels that are monolithicallyformed above a substrate, wherein the 3D memory includes circuitryassociated with operation of the multiple memory cells, and wherein thesemiconductor die that includes the 3D memory includes aserializer/deserializer interface configured to enable communication,via a second semiconductor die that is coupled to theserializer/deserializer interface, with a controller of the 3D memory,the controller on a third semiconductor die that is distinct from thesecond semiconductor die, wherein the second semiconductor die includesperiphery circuitry configured to scramble data received from thecontroller and to communicate the scrambled data to the semiconductordie via the serializer/deserializer interface.
 2. The apparatus of claim1, wherein the controller includes another serializer/deserializerinterface.
 3. The apparatus of claim 1, wherein the second semiconductordie further comprises peripheral circuitry coupled to the 3D memory, theperipheral circuitry including another serializer/deserializerinterface.
 4. The apparatus of claim 1, wherein the substrate is asilicon substrate.
 5. The apparatus of claim 1, wherein the circuitryassociated with operation of the multiple memory cells is configured tobe responsive to a write instruction to store write data into memorycells of the 3D memory and to be responsive to a read instruction toretrieve read data from the memory cells of the 3D memory.
 6. Anapparatus comprising: a first semiconductor die including athree-dimensional (3D) memory that includes multiple memory cellsarranged in multiple physical levels that are monolithically formedabove a substrate, wherein the 3D memory includes circuitry associatedwith operation of the multiple memory cells; and a second semiconductordie coupled to the first semiconductor die, the second semiconductor dieincluding periphery circuitry associated with the 3D memory, the secondsemiconductor die including a second serializer/deserializercommunication interface that is coupled to a firstserializer/deserializer communication interface of a memory controllerof the 3D memory, the periphery circuitry configured to scramble datareceived from the memory controller via the secondserializer/deserializer communication interface, wherein the memorycontroller is included on a third semiconductor die that is distinctfrom the first semiconductor die and the second semiconductor die. 7.The apparatus of claim 6, wherein the first semiconductor die is wirebonded to the second semiconductor die.
 8. The apparatus of claim 6,wherein the first semiconductor die and the second semiconductor die arein a common package.
 9. The apparatus of claim 6, wherein the substrateis a silicon substrate.
 10. The apparatus of claim 6, wherein thecircuitry associated with operation of the multiple memory cells isconfigured to be responsive to a write instruction to store data intomemory cells of the 3D memory and to be responsive to a read instructionto read data from the memory cells of the 3D memory.
 11. A methodcomprising: receiving a serial stream of data symbols at aserializer/deserializer interface of a semiconductor device including athree-dimensional (3D) memory that includes multiple memory cellsarranged in multiple physical levels that are monolithically formedabove a substrate, wherein the 3D memory includes circuitry associatedwith operation of the multiple memory cells, the serial stream of datasymbols representing scrambled data, the scrambled data generated byperiphery circuitry of a second semiconductor device that is coupled tothe serializer/deserializer interface, wherein the periphery circuitrygenerates the scrambled data based on write data received by the secondsemiconductor device from a memory controller; and deserializing theserial steam of data symbols to generate data to be stored at the 3Dmemory.
 12. The method of claim 11, wherein the peripheral circuitryincludes a second serializer/deserializer interface.
 13. The method ofclaim 12, wherein the write data is received at the second semiconductordevice via another serializer/deserializer interface.
 14. The method ofclaim 11, wherein the substrate is a silicon substrate.
 15. The methodof claim 11, wherein the circuitry associated with operation of themultiple memory cells is configured to be responsive to a writeinstruction to store the data into memory cells of the 3D memory and tobe responsive to a read instruction to read the data from the memorycells of the 3D memory.
 16. A method comprising: receiving a serialstream of data symbols at a serializer/deserializer interface of asecond semiconductor device, wherein the second semiconductor deviceincludes periphery circuitry for a three-dimensional (3D) memory at afirst semiconductor device, the 3D memory including multiple memorycells arranged in multiple physical levels that are monolithicallyformed above a substrate and including circuitry associated withoperation of the multiple memory cells; deserializing the serial steamof data symbols to generate data to be stored at the 3D memory;scrambling the data at the periphery circuitry to generate scrambleddata; and sending a control signal from the second semiconductor deviceto the 3D memory, wherein the control signal corresponds to storing thescrambled data at the 3D memory.
 17. The method of claim 16, wherein theserial stream of data symbols is received from a memory controllercoupled to the second semiconductor device via a secondserializer/deserializer interface.
 18. The method of claim 16, whereinthe second semiconductor device is coupled to the first semiconductordevice via another serializer/deserializer interface.
 19. The method ofclaim 16, wherein the substrate is a silicon substrate.
 20. The methodof claim 16, wherein the circuitry associated with operation of themultiple memory cells is configured to be responsive to a writeinstruction to store write data into memory cells of the 3D memory andto be responsive to a read instruction to retrieve read data from thememory cells of the 3D memory.